Power Amplifiers
Description
NXP Semiconductors Technical Data
Document Number: A2I09VD015N Rev. 0, 06/2018
RF LDMOS Wideband Integrated Power Amplifiers
The A2I09VD015N wideband integrated circuit is designed with on--chip matching that makes it usable from 575 to 960 MHz. This multi -- stage structure is rated for 48 to 55 V operation and covers all typical cellular base station mo...
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