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RJP60F7DPK

Renesas
Part Number RJP60F7DPK
Manufacturer Renesas
Description IGBT
Published Aug 5, 2020
Detailed Description Preliminary Datasheet RJP60F7DPK 600V - 50A - IGBT High Speed Power Switching R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 ...
Datasheet PDF File RJP60F7DPK PDF File

RJP60F7DPK
RJP60F7DPK

Overview
Preliminary Datasheet RJP60F7DPK 600V - 50A - IGBT High Speed Power Switching R07DS1001EJ0100 Rev.
1.
00 Jan 22, 2013 Features  Low collector to emitter saturation voltage VCE(sat) = 1.
35 V typ.
(at IC = 50 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching tf = 74 ns typ.
(at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 12 3 1.
Gate G 2.
Collector 3.
Emitter 4.
Collector E Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation ...


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