SuperGaN FET
Description
TP65H035G4WS
650V SuperGaN™ FET in TO-247 (source tab)
Description
The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV SuperGaN™ platform uses advanc...
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