GaN FET
Description
TP65H300G4LSG
650V SuperGaN™ GaN FET in PQFN (source tab)
Preliminary Datasheet
Description
The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (SuperGaN™) FET is a normally-off device. It combines stateof-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
SuperGaN is Transphorm’s lates...
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