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SSM3K56ACT

Toshiba
Part Number SSM3K56ACT
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Aug 12, 2020
Detailed Description MOSFETs Silicon N-Channel MOS SSM3K56ACT 1. Applications • High-Speed Switching 2. Features (1) 1.5-V gate drive voltage...
Datasheet PDF File SSM3K56ACT PDF File

SSM3K56ACT
SSM3K56ACT

Overview
MOSFETs Silicon N-Channel MOS SSM3K56ACT 1.
Applications • High-Speed Switching 2.
Features (1) 1.
5-V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.
5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.
5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.
8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.
5 V) 3.
Packaging and Pin Configuration CST3 SSM3K56ACT 1.
Gate 2.
Source 3.
Drain ©2015-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-11 2022-11-25 Rev.
2.
0 SSM3K56ACT 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 20 V VGSS ±...


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