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FDP100N10

INCHANGE
Part Number FDP100N10
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 3, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDP100N10 ·FEATURES ·With TO-220 packaging ·Low switching loss ...
Datasheet PDF File FDP100N10 PDF File

FDP100N10
FDP100N10

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDP100N10 ·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·AC-DC converters ·LED lighting ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous @Tc=75℃ 75 IDM Drain Current-Single Pulsed 300 PD Total Dissipation 208 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃...


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