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IRFP460APBF

International Rectifier
Part Number IRFP460APBF
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 3, 2020
Detailed Description PD- 94853 SMPS MOSFET IRFP460APbF Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l Hi...
Datasheet PDF File IRFP460APBF PDF File

IRFP460APBF
IRFP460APBF

Overview
PD- 94853 SMPS MOSFET IRFP460APbF Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified ( See AN1001) HEXFET® Power MOSFET VDSS Rds(on) max ID 500V 0.
27Ω 20A TO-247AC G D S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max.
20 13 80 280 2.
2 ± 30 3.
8 -55 to + 150 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies: l Full Bridge l PFC Boost Notes  through … are on page 8 Document Number: 91234 11/18/03 www.
vishay.
com 1 IRFP460APbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient ––– 0.
61 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.
27 Ω VGS = 10V, ID = 12A „ VGS(th) Gate Threshold Voltage 2.
0 ––– 4.
0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 25 ––– ––– 250 µA VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– 100 nA VGS = 30V ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions gfs Forward Transconductance Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drai...


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