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IPB090N06N3

Part Number	IPB090N06N3
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Sep 3, 2020
Detailed Description	isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPB090N06N3 ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast...
Datasheet	IPB090N06N3 PDF File

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPB090N06N3 ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistance ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation 71 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL P...

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