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IIPW60R045CP

INCHANGE
Part Number IIPW60R045CP
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 3, 2020
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CP ·FEATURES ·Static drain-source on-resis...
Datasheet PDF File IIPW60R045CP PDF File

IIPW60R045CP
IIPW60R045CP

Overview
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤45mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 230 PD Total Dissipation @TC=25℃ 431 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) ...


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