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STP100N8F6

Part Number	STP100N8F6
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Sep 3, 2020
Detailed Description	Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP100N8F6 ·FEATURES ·Very low on-resistance ·Very low gate cha...
Datasheet	STP100N8F6 PDF File

Overview

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP100N8F6 ·FEATURES ·Very low on-resistance ·Very low gate charge ·High avalanche ruggedness ·Low gate drive power loss ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 100 70 400 PD Total Dissipation 176 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL P...

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