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2SA1009A

Part Number	2SA1009A
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1V(Max.)@ IC= -0.3A ·Fast ...
Datasheet	2SA1009A PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1V(Max.
)@ IC= -0.
3A ·Fast Switching Speed ·Wide Reverse Bias Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators, DC/DC converters and High frequency power amplifier application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -7.
0 V IC Collector Current-Continuous -2.
0 A ICM Collector Current-Peak -4.
0 A PC Collector Power Dissipation@ Ta=25℃ 15 W TJ Junction T...

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