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2SC3177

Part Number	2SC3177
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·With TO-126 packaging ·Low collector-to-emitter saturation voltage ·Fast ...
Datasheet	2SC3177 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·With TO-126 packaging ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3177 isc website：www.
iscsemi.
com 1 isc & iscsem...

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