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2SC3298

NPN Transistor

Description

isc Silicon NPN Power Transistors 2SC3298/A/B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B ·Complement to Type 2SA1306/A/B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Dr...

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