DatasheetsPDF.com

2SC3857

Part Number	2SC3857
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) ·Good Linearity ...
Datasheet	2SC3857 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1493 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3857 isc websi...

Similar Datasheet

2SC380 NPN Transistor - HAOCHANG
2SC380 NPN Transistor - SEMTECH
2SC3802K Epitaxial Planar NPN Silicon Transistor - Rohm
2SC3803 Silicon NPN Transistor - Toshiba Semiconductor
2SC3803 Transistor - Kexin
2SC3805 Silicon NPN Transistor - Toshiba Semiconductor
2SC3807 NPN Epitaxial Planar Silicon Transistor - Sanyo Semicon Device
2SC3807 TRANSISTOR - WEJ
2SC3807 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SC3807 NPN Transistor - JCET

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)