NPN Transistor
Description
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD131
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= 45V(Min.) ·Complement to type BD132 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power and general purpose
applicati...
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