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BU132

Part Number	BU132
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 7, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VC...
Datasheet	BU132 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
0 V(Max)@ IC = 0.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 600V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO VEBO IC ICM PC TJ Tstg Collector-Emitter Voltage 600 V Emitter-Base Voltage Collector Current-Continuous 6 V 1 A Collector Current-Peak 2 A Collector Power Dissipation@TC=25℃ 15 W Junction Temperatu...

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