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ET190

Part Number	ET190
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 8A ·High rel...
Datasheet	ET190 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.
0V(Min) @IC= 8A ·High reliability ·High D.
C current gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous 1 A PC Collector Power Dissipation 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ET190 isc website：www.
iscsemi.
com 1 isc & iscs...

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