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FJAF6810

Part Number	FJAF6810
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High R...
Datasheet	FJAF6810 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ FJAF6810 isc website：www.
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