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FJB102

INCHANGE
Part Number FJB102
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 8, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor FJB102 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ I...
Datasheet PDF File FJB102 PDF File

FJB102
FJB102

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor FJB102 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse IB Base Current PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 V 8 A 15 A 1 A ...


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