NPN Transistor
Description
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KSD363
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector Power Dissipation-
: PC= 40W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for B/W TV horizontal deflection output applications.
ABSOLU...
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