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TIP31C

Part Number	TIP31C
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 9, 2020
Detailed Description	isc Silicon NPN Power Transistors INCHANGE Semiconductor TIP31C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·C...
Datasheet	TIP31C PDF File

Overview

isc Silicon NPN Power Transistors INCHANGE Semiconductor TIP31C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Complement to Type TIP32C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junct...

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