isc Silicon PNP Power Transistor
2SA900
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier applications.
AB...
