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2SB1020

INCHANGE
Part Number 2SB1020
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 17, 2020
Detailed Description isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·High DC C urrent Gain- : hFE= 2000(Min.)@IC= -3A ·Low Collect...
Datasheet PDF File 2SB1020 PDF File

2SB1020
2SB1020

Overview
isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·High DC C urrent Gain- : hFE= 2000(Min.
)@IC= -3A ·Low Collector Saturation Voltage- : VCE(sat)= -1.
5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1415 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Co...


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