PNP Transistor
Description
isc Silicon PNP Darlingtion Power Transistor
2SB1021
DESCRIPTION ·High DC C urrent Gain-
: hFE= 2000(Min.)@IC= -3A ·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1416 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High power switching applica...
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