PNP Transistor
Description
isc Silicon PNP Darlingtion Power Transistor
DESCRIPTION ·High DC C urrent Gain-
: hFE= 2000(Min.)@IC= -1A ·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@IC= -2A ·Good Linearity of hFE ·Complement to Type 2SD1413 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching applications. ·Hammer driv...
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