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T2141F
NPN Transistor
Description
isc Silicon
NPN
Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 600(Min.)@ IC= 3A ·Low Collector Saturation Voltage : VCE(sat)= 1.8V(Max.)@ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching for dynamotor excitati...
INCHANGE
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T2141F
NPN Transistor
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