NPN Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA940 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications. ·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBO...
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