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2SC2344

Part Number	2SC2344
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.3V(Typ.)@ IC= 0.5A ·Colle...
Datasheet	2SC2344 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.
3V(Typ.
)@ IC= 0.
5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.
) ·Complement to Type 2SA1011 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, audio frequency power amplifiers, 100W output predriver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.
5 A ICM Collector Current-Peak 3.
0 A PC Total Power Dissipation@ TC=25℃...

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