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2SC3184

NPN Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage - : VCBO≥900V ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Switching Regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volt...

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