NPN Transistor
Description
isc Silicon NPN Power Transistor
2SC3231
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 60V(Min) ·Large Current Capability ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for B/W TV horizontal deflection output applications.
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