NPN Transistor
Description
isc Silicon NPN Power Transistor
2SC3272
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in color TV chroma output and video
signal amplification.
ABSOLUTE MAXIMUM RA...
Similar Datasheet
