NPN Transistor
Description
isc Silicon NPN Power Transistor
2SC3280
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 8A ·Complement to Type 2SA1301 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 80W hi...
Similar Datasheet
