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2SC3296

NPN Transistor

Description

isc Silicon NPN Power Transistor 2SC3296 TDESCRIPTIONT ·Collector-Emitter Breakdown Voltage- : V = B(BR)CEOB 150V(Min) ·Complement to Type 2SA1304 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation TAPPLICATIONST ·Power amplifier applications. ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(TBaB=25℃) SYMBOL PARAM...

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