NPN Transistor
Description
isc Silicon NPN Power Transistor
2SC3300
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for DC-DC converter, emergency lighting
inverter and general purpose appli...
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