NPN Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage-
: VCE(sat)= 1.2V(Max,)@ IC= 3A ·Complement to Type 2SB1393 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplifications....
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