NPN Transistor
Description
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 5A ·Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max.)@ IC= 5.0A = 3.0V(Max.)@ IC= 10A
·Complement to Type BDW46 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operat...
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