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BU108

INCHANGE
Part Number BU108
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 23, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Switching Speed ·Collector Current- IC = 5A ·Minimum L...
Datasheet PDF File BU108 PDF File

BU108
BU108

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Switching Speed ·Collector Current- IC = 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage CRT scanning applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 3.
5 A IE Emitter Current-Continuous PC Collector Power Dissipation @VCE≤100V,TC≤95℃ TJ Junction Temperature 8.
5 A 12.
5 W 115 ℃ Tstg Storage Temperature -65~115 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
6 ℃/W BU108 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ...


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