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KSB834W

INCHANGE
Part Number KSB834W
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 27, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Complement to KSD880W ·100% avalanche tested ·Minimum Lot-to-Lot variatio...
Datasheet PDF File KSB834W PDF File

KSB834W
KSB834W

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Complement to KSD880W ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ -3 A 1.
5 W 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSB834W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon ...


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