NPN Transistor
Description
isc Silicon NPN Power Transistor
MJ15015
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE= 20-70@IC = 4A,VCE= 4V ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to the PNP MJ15016 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power au...
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