NPN Transistor
Description
isc Silicon NPN Power Transistor
MJE2801T
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) ·High DC Current Gain-
: hFE= 25-100@IC= 3A ·Complement to Type MJE2901T ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as an output device in complementary
audio amplifiers up...
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