PNP Transistor
Description
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB896
DESCRIPTION ·Collector-Emitter BreakdownVoltage-
: V(BR)CEO= -40V(Min.) ·Low Collector Saturation Voltage-
: VCE(sat)= -0.6(Max.) @IC= -7A ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for ...
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