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2SC1046

Part Number	2SC1046
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1046 DESCRIPTION ·With TO-3 Package ·High breakdown voltage...
Datasheet	2SC1046 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1046 DESCRIPTION ·With TO-3 Package ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·for use in horizontal deflection output stages for color TV receives ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC IB PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 1000 V 400 V 6 V 3.
0 A 0.
1 A 25 W 125 ℃ -40~125 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1046 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2.
0A; IB= 400mA VBE(sat) Base-Emitter S...

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