NPN Transistor
Description
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD609
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Complement to Type BD610 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high power audio amplifiers utilizing
complementary or qu...
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