PNP Transistor
Description
isc Silicon PNP Darlington Power Transistor
BD646
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD645 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as complementary AF pus...
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