isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = -45 V ·DC Current Gain—
: hFE = 750(Min) @ IC= -1.5 A ·Complement to Type BD675 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as output devices in complementary
general-purpose amplif...
