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BDW12

Part Number	BDW12
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor BDW12 DESCRIPTION ·With TO-3 Package ·High Current Capability ...
Datasheet	BDW12 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor BDW12 DESCRIPTION ·With TO-3 Package ·High Current Capability ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 120 V 120 V 6 V 15 A 180 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS...

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