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BDW54

Part Number	BDW54
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 30, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDW54 DESCRIPTION ·High DC Current Gain : hFE= 750...
Datasheet	BDW54 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDW54 DESCRIPTION ·High DC Current Gain : hFE= 750(Min.
)@ IC= -1.
5A, VCE= -3V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min) ·Low Collector Saturation Voltage ·Complement to Type BDW53 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -45 VCEO Collector-Emitter Voltage -45 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -4 IB Base Current-DC -50 PC Collector Power ...

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