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IPD12CN10N

Infineon
Part Number IPD12CN10N
Manufacturer Infineon
Description Power-Transistor
Published Sep 30, 2020
Detailed Description IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Exc...
Datasheet PDF File IPD12CN10N PDF File

IPD12CN10N
IPD12CN10N

Overview
IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 12.
4 mW 67 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Package PG-TO263-3 PG-TO252-3 Marking 12CN10N 12CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol...


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