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IPB031NE7N3

Infineon
Part Number IPB031NE7N3
Manufacturer Infineon
Description Power Transistor
Published Oct 2, 2020
Detailed Description OptiMOSTM3 Power-Transistor Features • Optimized technology for synchronous rectification • Ideal for high frequency swi...
Datasheet PDF File IPB031NE7N3 PDF File

IPB031NE7N3
IPB031NE7N3

Overview
OptiMOSTM3 Power-Transistor Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB031NE7N3 G IPB031NE7N3 G 75 V 3.
1 mΩ 100 A Package Marking PG-TO263-3 031NE7N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed dr...


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