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IPP086N10N3
N-Channel MOSFET
Description
INCHANGE Semiconductor isc N-Channel MOSFET
Transistor
IPP086N10N3， IIPP086N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of application...
INCHANGE
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